Differences between the DGD2103/DGD2104 and the IR2103/IR2104

The DGD2103 and DGD2104 are high-aspect/low-aspect gate driving force ICs able to riding 600V MOSFET/IGBTs. And you can use them to be a pin to pin, functionally compatible, drop in replacements to the IRS2103 and IRS2104 respectively. However, for packages the use of the older IR2103 or IR2104. There might also additionally want to be a small IR2104 circuit extrade of BOM to great fit the gate drivers’ response.

Differences among the DGD2103/DGD2104 and the IR2103/IR2104

From the software perspective, the maximum extensive variations withinside the specs. IR2104 schematic are rise/fall and output modern functionality as proven in Table 1 below.

A quicker gate driving force IC will turn-on and turn-off the MOSFET/IGBT quicker. In a few applications, this may translate to a extra green machine due to much less switching losses. But in a few driving force circuits, the quicker dV/dt and dI/dt should reason extra overshoot, and probably greater –VS undershoot, likely inflicting a circuit to now no longer characteristic properly.

Hence, to apply the DGD2103/DGD2104 in an IR2103/IR2104 utility. And if the aim is to have the same gate pressure. Because the IR2103/IR2104, then IR2104 pinout the gate resistor might want to be elevated to sluggish down the pressure signal. Matching the Rise/Fall time A usual gate driving force half-bridge circuit may be visible in Figure 1. Often for the HO and LO gate drives, outside resistors (RGH and RGL) are used. To growth rise/fall time, RGH and RGL are elevated.

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DGD2104 VS DGD2103

The DGD2104 is a excessive-voltage/excessive-velocity gate motive force able to riding N-channel MOSFETs and IGBTs in a 1/2 of bridge configuration. High-voltage processing strategies permit the DGD2104’s excessive aspect to interchange to 600V in a bootstrap operation.The DGD2104 common sense inputs are like minded with fashionable TTL and CMOS levels (right all the way down to 3.3V) to interface without difficulty with controlling devices. The motive force outputs function excessive-pulse contemporary buffers designed for minimal motive force pass conduction. The DGD2104 has a hard and fast inner deadtime of 520ns (typical). The DGD2104 is obtainable withinside the SO-8 (Type TH) package deal and operates over an extended -40°C to +125°C temperature range.

The DGD2103 is a excessive-voltage/excessive-velocity gate motive force able to using N-channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing strategies allow the DGD2103’s excessive aspect to interchange to 600V in a bootstrap operation.The DGD2103 good judgment inputs are well suited with general TTL and CMOS levels (right all the way down to 3.3V) to interface without problems with controlling devices. The motive force output capabilities excessive pulse modern-day buffers designed for minimal motive force move conduction. DGD2103 has a set inner deadtime of 520ns (typical).The DGD2103 is obtainable withinside the SO-8 (Type TH) package deal and operates over an extended -40°C to +125°C temperature range.

Key Features of IC IR2104

Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V
Undervoltage lockout
3.3 V, 5 V, and 15 V input logic compatible
Cross-conduction prevention logic
Internally set deadtime
High-side output in phase with input
Shutdown input turns off both channels
Matched propagation delay for both channels
RoHS compliant

Definition of IR2104

The IR2104 is a brand new HVIC product that replaces the IR2104 and is pin-to-pin like minded with its corresponding predecessor. In many cases, very little alternate is important to use the brand new product. This utility notice describes the numerous variations among the IR2104 and the IR2104 HVICs.

The IR2104 is a excessive voltage, excessive pace strength MOSFET and IGBT motive force with impartial excessive and coffee facet referenced output channels. Proprietary HVIC and latch immune CMOS technology allow ruggedized monolithic construction. The common sense enter is like minded with preferred CMOS or LSTTL outputs, right all the way down to three.three V common sense.

The output drivers function a excessive pulse modern buffer degree designed for minimal motive force crossconduction. The floating channel may be to force an N-channel strength MOSFET or IGBT withinside the excessive facet configuration which operates as much as six hundred V.

IR2103 vs. IR2104

The IR2103 and IR2104 are excessive-facet/low-facet gate motive force ICs able to riding 600V MOSFET/IGBTs. And it had been a pin to pin, functionallydrop in replacements to the IR2103 and IR2104 respectively. However, for programs the use of the older IR2103 or IR2104, there may want to be a small alternate of BOM to first-rate healthy the gate drivers’ response.

Differences among the DGD2103/DGD2104 and the IR2103/IR2104 From the utility perspective. The maximum full-size variations withinside the specs are upward push/fall and output modern functionality as proven in Table 1 below.

A quicker gate motive force IC will turn-on and turn-off the MOSFET/IGBT quicker. In a few programs, this will translate to a extra green device due to much less switching losses. But in a few motive force circuits, the quicker dV/dt and dI/dt ought to reason extra overshoot. And doubtlessly extra –VS undershoot, probable inflicting a circuit to now no longer characteristic properly.

Differences among the DGD2103/DGD2104

Hence, apply the DGD2103/DGD2104 in an IR2103/IR2104 utility. If the aim is to have the comparable gate force. Because the IR2103/IR2104, then the gate resistor might want to be improved to sluggish down the force signal.

Matching the Rise/Fall time A ordinary gate motive force half-bridge circuit may be visible in Figure 1. Often for the HO and LO gate drives, outside resistors (RGH and RGL) are used. To boom upward push/fall time, RGH and RGL are improved.

Differences among the IR2103/IR2104

First-rate healthy the DGD2103/DGD2104 in an IR2103/IR2104 utility. Healthy the upward push/fall time of the DGD2103/DGD2104 with that of the IR2103/IR2104 in that utility. To display an example, the use of the circuit just like Figure 1 besides rather than the MOSFETs as load to the gate force signal, a load capacitor (CL = 1000pF) become used.

Hence, via way of means of making the gate resistors, RGH and RGL, large you’ll have comparable upward push and fall instances and will lower the possibilities of any undesirable consequences because of the better dV/dt and dI/dt. Note that during different motive force circuits the price can be extra or much less than 100Ω relying on preliminary gate resistor price and MOSFET gate capacitance.

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